cbscpe wrote:
The non-WDC CMOS 65C02 were indeed drop-in replacements for the NMOS 6502, not the W65C02. You can clearly see that in the datasheets. E.g. when I look in the old datasheet of the G65C802/816 then minimal input high voltage for /RES, RDY, /IRQ, DATA, /SO and BE is 2.0V but in the datasheets for the W65C02/816 it says it is 0.7VDD for all inputs.
But nevertheless, even when using old EPROMs with the W65C816 in my older systems I never had any issues, however the highest clock I used in those systems was 4MHz.
Well, we do know the WDC data sheets can always stand some improvement.
POC V1.1 runs at 12.5 MHz, using an ISSI IS61C1024AL SRAM. The DC characteristics for that device say among other things:
Code:
Voh Output HIGH Voltage Vdd = Min., Ioh = –4.0 mA 2.4 — V
Vol Output LOW Voltage Vdd = Min., Iol = 8.0 mA — 0.4 V
Vih for the 65C816 is rated at
Vdd × 0.8, which would be 4 volts, some 1.6 volts above the SRAM's
Voh rating of
2.4. Granted,
Voh is a minimum, but I doubt that it rises to the level of the 65C816's
Vih rating. Something doesn't compute, yet the system works and is 100 percent stable.