Tompis1995 wrote:
Also, I see an intersection of one line going from the drain node of a depletion mode transistor to the source of an enhancement mode transistor and a line connecting to the gate of the depletion mode transistor. Does that mean they are connected? Because the rest of this picture has notable dents in the wires indicating a jump over.
Indeed - the modern style is to have a blob where there's a connection, and an unadorned crossing is just a crossing with no connection. The old style, as seen here, is to have a jump over when there's no connection, and a crossing without a jump is a connection.
Chromatix wrote:
Yes, a standard feature of this process (which was an innovation by MOS at the time) is for depletion-mode transistors to have their gate connected to their source, causing them to act as constant-current pull-up loads. This was a much more efficient use of die area than the long, thin wires previously used as resistive pull-up loads.
Hmm, I don't quite agree. MOS Technology were indeed among the first adopters of ion implantation as a way of adjusting transistor thresholds, and so they could and did use depletion-mode pullups. But the previous technology was enhancement-mode pullups with their gates tied to a rail - either the Vdd rail or an elevated rail. I'm not sure they were larger, but they were much less power-efficient. Or, more power-wasteful. They also pulled up only to a threshold below the rail, which made for lower logic levels and is the reason why the 6800 and similar need an off chip clock driver.
Long thin wires are generally used for resistors in analogue circuitry, then and now. I'm not sure I've ever seen them for pullups in logic gates.